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This article is an orphan, as few or no other articles link to it. Please introduce links to this page from related articles; suggestions may be available. (February 2009) Gas Immersion Laser Doping is a method of doping a semiconductor material like Silicon. How it works Example: Doping Silicon with Boron A thin Silicon wafer is immersed in Boron gas while a pulsed laser repeatedly melts and cools the wafer. The Boron atoms in the gas diffuse into the molten parts of the Silicon and stay there when the Silicon solidifies, thus producing a Silicon wafer with Boron impurities. The resultant material is a P-type semiconductor. See also Doping Semiconductor Wafers Semiconductor P-type semiconductor N-type semiconductor References This condensed matter physics-related article is a stub. You can help Wikipedia by expanding it.v · d · e