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This article does not cite any references or sources. Please help improve this article by adding citations to reliable sources. Unsourced material may be challenged and removed. (December 2009) The VMOS structure has a V-groove at the gate region VMOS ( /ˈviːmɒs/) is an acronym for Vertical Metal Oxide Semiconductor (Transistor). Vmos is also used to describe the V-groove shape vertically cut into the substrate material metal oxide semiconductor transistor. The "V" shape of the MOSFET's gate allows the device to deliver a higher amount of current from the source to the drain of the device. The shape of the depletion region creates a wider channel, allowing more current to flow through it. This structure has a V-groove at the gate region and was used for the first commercial devices. The device was used as a power device until more suitable geometries, like the UMOS (or Trench-Gate MOS) were introduced in order to lower tmaximum electric field at the top of the V shape and thus leading to higher maximum voltages than in case of the VMOS. VMOS was invented by T. J. Rodgers while he was a student at Stanford University.[citation needed] This technology-related article is a stub. You can help Wikipedia by expanding it.v · d · e